FDN86246 Datasheet, MOSFET, Fairchild Semiconductor

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FDN86246 Features and benefits

General Description
* Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
* High performance trench technology fo.

FDN86246 Description

* Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mou.

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